SI4963 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2P-CH 20V 4.9A 8SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | FET Feature | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Configuration | Mounting Type | Technology | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | Logic Level Gate | 32 mOhm | 4.9 A | 1.1 W | -55 °C | 150 °C | 20 V | 2 P-Channel | Surface Mount | MOSFET (Metal Oxide) | 1.4 V | 21 nC |