Discrete Semiconductor Products

APT54GA60BD30

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TRANS IGBT CHIP N-CH 600V 96A 3-PIN(3+TAB) TO-247

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Discrete Semiconductor Products

Active

TRANS IGBT CHIP N-CH 600V 96A 3-PIN(3+TAB) TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	APT54GA60BD30

Current - Collector (Ic) (Max) [Max]	96 A
Current - Collector Pulsed (Icm)	161 A
Gate Charge	28 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	416 W
Supplier Device Package	TO-247 [B]
Switching Energy	534 µJ, 466 µJ
Td (on/off) @ 25°C	112 ns
Td (on/off) @ 25°C	17 ns
Test Condition	400 V, 4.7 Ohm, 32 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Vce(on) (Max) @ Vge, Ic	IGBT Type	Test Condition	Package / Case	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Gate Charge	Switching Energy	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Microchip Technology APT54GA60B	2.5 V	PT	4.7 Ohm 15 V 32 A 400 V	TO-247-3	112 ns	17 ns	161 A	Through Hole	TO-247 [B]	-55 °C	150 °C	96 A	158 nC	466 µJ 534 µJ	416 W	600 V
Microchip Technology APT54GA60BD30	2.5 V	PT	4.7 Ohm 15 V 32 A 400 V	TO-247-3	112 ns	17 ns	161 A	Through Hole	TO-247 [B]	-55 °C	150 °C	96 A	28 nC	466 µJ 534 µJ	416 W	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	70	$ 7.70

General part information

Fast switching with low EMI

Very Low Eoff for maximum effi ciency

Ultra low Cres for improved noise immunity

Technical documentation and resources