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Discrete Semiconductor Products

JANTXV1N6081

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Microchip Technology

DIODE GEN PURP 150V 2A G AXIAL

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DocumentsDatasheet
Discrete Semiconductor Products

JANTXV1N6081

Unknown
Microchip Technology

DIODE GEN PURP 150V 2A G AXIAL

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV1N6081
Current - Average Rectified (Io)2 A
Current - Reverse Leakage @ Vr1 µA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]155 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseG, Axial
QualificationMIL-PRF-19500/503
Reverse Recovery Time (trr)30 ns
Speed200 mA, 500 ns
Supplier Device PackageG, Axial
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 44.34
Microchip DirectN/A 1$ 47.75

Description

General part information

JANTXV1N6081-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/503 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70ºC) in different package sizes for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6073US thru 1N6081US). microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources