Discrete Semiconductor Products

SIRA22DP-T1-RE3

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MOSFET N-CH 25V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 25V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA22DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	7570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max) [Max]	83.3 W
Rds On (Max) @ Id, Vgs [Max]	0.76 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Vgs(th) (Max) @ Id [Max]	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]	Vgs (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIRA22DP-T1-RE3	2.2 V	Surface Mount	MOSFET (Metal Oxide)	7570 pF	0.76 mOhm	60 A	PowerPAK® SO-8	-55 °C	150 °C	N-Channel	83.3 W	-12 V 16 V	PowerPAK® SO-8	4.5 V 10 V	25 V	155 nC

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General part information

N-Channel 25 V 60A (Tc) 83.3W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources