SIRA22 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 25V 60A PPAK SO-8
| Part | Vgs(th) (Max) @ Id [Max] | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Power Dissipation (Max) [Max] | Vgs (Max) [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.2 V | Surface Mount | MOSFET (Metal Oxide) | 7570 pF | 0.76 mOhm | 60 A | PowerPAK® SO-8 | -55 °C | 150 °C | N-Channel | 83.3 W | -12 V 16 V | PowerPAK® SO-8 | 4.5 V 10 V | 25 V | 155 nC |