Discrete Semiconductor Products

FQT4N20TF

Obsolete

MOSFET N-CH 200V 850MA SOT223-4

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 850MA SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	FQT4N20TF

Current - Continuous Drain (Id) @ 25°C	850 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2.2 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Technology	Supplier Device Package
ON Semiconductor FQT4N20TF	200 V	2.2 W	6.5 nC	5 V	Surface Mount	N-Channel	850 mA	-55 °C	150 °C	10 V	1.4 Ohm	TO-261-4 TO-261AA	30 V	MOSFET (Metal Oxide)	SOT-223-4
ON Semiconductor FQT4N20TF	200 V	2.2 W	6.5 nC	5 V	Surface Mount	N-Channel	850 mA	-55 °C	150 °C	10 V	1.4 Ohm	TO-261-4 TO-261AA	30 V	MOSFET (Metal Oxide)	SOT-223-4

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4

Technical documentation and resources