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TO-236AB (SOT23)
Discrete Semiconductor Products

TP0610T-G

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Microchip Technology

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.12A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3

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TO-236AB (SOT23)
Discrete Semiconductor Products

TP0610T-G

Active
Microchip Technology

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.12A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3

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DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTP0610T-G
Current - Continuous Drain (Id) @ 25°C120 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds60 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)360 mW
Rds On (Max) @ Id, Vgs10 Ohm
Supplier Device PackageTO-236AB (SOT23)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.92
25$ 0.77
100$ 0.71
Digi-Reel® 1$ 0.92
25$ 0.77
100$ 0.71
Tape & Reel (TR) 3000$ 0.71

Description

General part information

TP0610 Series

Low threshold (-2.4V max.)

High input impedance

Low input capacitance (95pF typical)

Documents

Technical documentation and resources