Discrete Semiconductor Products

SISH108DN-T1-GE3

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MOSFET N-CH 20V 14A PPAK1212-8SH

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Discrete Semiconductor Products

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MOSFET N-CH 20V 14A PPAK1212-8SH

Technical Specifications

Parameters and characteristics for this part

Specification	SISH108DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs [Max]	4.9 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Vishay General Semiconductor - Diodes Division SISH108DN-T1-GE3	Surface Mount	30 nC	1.5 W	16 V	2 V	N-Channel	MOSFET (Metal Oxide)	PowerPAK® 1212-8SH	20 V	4.5 V 10 V	-55 °C	150 °C	4.9 mOhm	14 A	PowerPAK® 1212-8SH

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources