SISH108 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 14A PPAK1212-8SH
| Part | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Technology | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 30 nC | 1.5 W | 16 V | 2 V | N-Channel | MOSFET (Metal Oxide) | PowerPAK® 1212-8SH | 20 V | 4.5 V 10 V | -55 °C | 150 °C | 4.9 mOhm | 14 A | PowerPAK® 1212-8SH |