Discrete Semiconductor Products

SI9926CDY-T1-GE3

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MOSFET 2N-CH 20V 8A 8SOIC

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Discrete Semiconductor Products

Active

MOSFET 2N-CH 20V 8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI9926CDY-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3.1 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Configuration	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI9926BDY-T1-GE3	20 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	20 nC	1.14 W	6.2 A	Surface Mount	8-SOIC	8-SOIC	3.9 mm	0.154 in	20 V	1.5 V	2 N-Channel (Dual)	Logic Level Gate
Vishay General Semiconductor - Diodes Division SI9926CDY-T1-GE3	18 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)		3.1 W	8 A	Surface Mount	8-SOIC	8-SOIC	3.9 mm	0.154 in	20 V	1.5 V	2 N-Channel (Dual)	Logic Level Gate	33 nC	1200 pF

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General part information

Mosfet Array 20V 8A 3.1W Surface Mount 8-SOIC

Technical documentation and resources