SI9926 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET 2N-CH 20V 6.2A 8SOIC
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Configuration | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 20 nC | 1.14 W | 6.2 A | Surface Mount | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 1.5 V | 2 N-Channel (Dual) | Logic Level Gate | ||
Vishay General Semiconductor - Diodes Division | 18 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3.1 W | 8 A | Surface Mount | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 1.5 V | 2 N-Channel (Dual) | Logic Level Gate | 33 nC | 1200 pF |