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Discrete Semiconductor Products

CSD16556Q5B

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 1.5 MOHM

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VSON-CLIP (DNK)
Discrete Semiconductor Products

CSD16556Q5B

Active
Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 1.5 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD16556Q5B
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]47 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6180 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)3.2 W, 191 W
Rds On (Max) @ Id, Vgs1.07 mOhm
Supplier Device Package8-VSONP (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.23
10$ 1.86
100$ 1.48
500$ 1.25
1000$ 1.06
Digi-Reel® 1$ 2.23
10$ 1.86
100$ 1.48
500$ 1.25
1000$ 1.06
Tape & Reel (TR) 2500$ 1.01
5000$ 0.97
Texas InstrumentsLARGE T&R 1$ 1.68
100$ 1.39
250$ 1.00
1000$ 0.75

Description

General part information

CSD16556Q5B Series

This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.