CSD16556Q5B Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Technology	Vgs(th) (Max) @ Id	Vgs (Max)
Texas Instruments CSD16556Q5B	47 nC	25 V	6180 pF	3.2 W 191 W	-55 °C	150 °C	4.5 V 10 V	8-PowerTDFN	100 A	8-VSONP (5x6)	1.07 mOhm	N-Channel	Surface Mount	MOSFET (Metal Oxide)	1.7 V	20 V

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm

Key Features

• Extremely Low ResistanceUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageExtremely Low ResistanceUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.