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15-QFN
Integrated Circuits (ICs)

NCP51810AMNTWG

Active
ON Semiconductor

MOSFET DRIVER, HIGH SIDE AND LOW SIDE, 25 NS DELAY, 9 V TO 17 V SUPPLY, 2 A, QFN-15

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15-QFN
Integrated Circuits (ICs)

NCP51810AMNTWG

Active
ON Semiconductor

MOSFET DRIVER, HIGH SIDE AND LOW SIDE, 25 NS DELAY, 9 V TO 17 V SUPPLY, 2 A, QFN-15

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNCP51810AMNTWG
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]2 A
Current - Peak Output (Source, Sink) [custom]1 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]150 V
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature150 °C
Package / Case15-VFQFN
Rise / Fall Time (Typ) [custom]2 ns
Rise / Fall Time (Typ) [custom]1.5 ns
Supplier Device Package15-QFN (4x4)
Voltage - Supply [Max]17 V
Voltage - Supply [Min]9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.26
10$ 2.03
25$ 1.92
100$ 1.54
250$ 1.34
500$ 1.30
1000$ 1.04
Digi-Reel® 1$ 2.26
10$ 2.03
25$ 1.92
100$ 1.54
250$ 1.34
500$ 1.30
1000$ 1.04
Tape & Reel (TR) 4000$ 1.00
8000$ 0.96
NewarkEach (Supplied on Cut Tape) 1$ 2.11
ON SemiconductorN/A 1$ 0.87

Description

General part information

NCP51810 Series

The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as −3.5 V to +150 V (typical) common-mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.