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ONSEMI MJ15015G
Discrete Semiconductor Products

MJ14002G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 80 V, 60 A, 300 W, TO-204AA, THROUGH HOLE

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ONSEMI MJ15015G
Discrete Semiconductor Products

MJ14002G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 80 V, 60 A, 300 W, TO-204AA, THROUGH HOLE

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Technical Specifications

Parameters and characteristics for this part

SpecificationMJ14002G
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]15
Mounting TypeThrough Hole
Power - Max [Max]300 W
Supplier Device PackageTO-204
Supplier Device PackageTO-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic [Max]3 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 19.51
10$ 13.95
25$ 12.47
80$ 11.03
230$ 10.86
NewarkEach 1$ 18.29
10$ 13.43
25$ 12.97
50$ 12.50
100$ 12.02
ON SemiconductorN/A 1$ 11.46

Description

General part information

MJ14002 Series

The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications.. The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices.