MJ14002 Series

60 A, 80 V NPN Bipolar Power Transistor

Catalog

60 A, 80 V NPN Bipolar Power Transistor

Part	Supplier Device Package	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]
ON Semiconductor MJ14002G	TO-204	TO-3	60 A	Through Hole	300 W	15	3 V	80 V	NPN	1 mA

Catalog

60 A, 80 V NPN Bipolar Power Transistor

Key Features

• High Current Capability - ICContinuous = 60 Amperes

• DC Current Gain - hFE= 15-100 @ IC= 50 Adc

• Low Collector-Emitter Saturation Voltage - VCE(sat)= 2.5 Vdc (Max) @ IC= 50 Adc

• Pb-Free Packages are Available

Description

The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications.. The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices.