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STMicroelectronics-STF30N65M5 MOSFETs Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220FP Tube
Discrete Semiconductor Products

STF9N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.72 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetAN4250+23
STMicroelectronics-STF30N65M5 MOSFETs Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220FP Tube
Discrete Semiconductor Products

STF9N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.72 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE

Deep-Dive with AI

DocumentsDatasheetAN4250+23

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF9N60M2
Current - Continuous Drain (Id) @ 25°C5.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]320 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)20 W
Rds On (Max) @ Id, Vgs780 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 1.15
10$ 0.64
DigikeyTube 1$ 1.67
10$ 1.07
100$ 0.72
500$ 0.57
1000$ 0.52
2000$ 0.52
NewarkEach 1$ 1.68
10$ 1.14
100$ 0.96
500$ 0.89
1000$ 0.86
3000$ 0.83
10000$ 0.82

Description

General part information

STF9N60M2 Series

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

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