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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N1482 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1.5 A |
| Current - Collector Cutoff (Max) [Max] | 5 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 35 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-5 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 750 mV |
| Voltage - Collector Emitter Breakdown (Max) | 55 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 43.36 | |
| Microchip Direct | N/A | 1 | $ 46.69 | |
| Newark | Each | 100 | $ 43.36 | |
| 500 | $ 41.69 | |||
Description
General part information
2N1482-Transistor Series
This specification covers the performance requirements for silicon, NPN, switching, medium power 2N1479, 2N1480, 2N1481 and 2N1482 transistors for use in compatible equipment circuits. One level of product assurance (JAN) is provided for all encapsulated devices as specified in MIL-PRF-19500/207. The device package outlines are as follows: TO-205AA (formerly modified TO-5 without suffix S) or a TO-205AD (formerly modified TO-39 with suffix S) in accordance with all encapsulated device types.
Documents
Technical documentation and resources