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DFN2020MD-6
Discrete Semiconductor Products

PMPB55ENEAX

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Freescale Semiconductor - NXP

SMALL SIGNAL LOW RDSON AUTOMOTIVE TRANS MOSFET N-CH 60V 4A 6-PIN DFN2020MD T/R

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DFN2020MD-6
Discrete Semiconductor Products

PMPB55ENEAX

Active
Freescale Semiconductor - NXP

SMALL SIGNAL LOW RDSON AUTOMOTIVE TRANS MOSFET N-CH 60V 4A 6-PIN DFN2020MD T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMPB55ENEAX
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds435 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)1.65 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs56 mOhm
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.43
10$ 0.37
100$ 0.25
500$ 0.20
1000$ 0.16
Digi-Reel® 1$ 0.43
10$ 0.37
100$ 0.25
500$ 0.20
1000$ 0.16
Tape & Reel (TR) 3000$ 0.12

Description

General part information

PMPB55ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.