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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Grade | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Qualification | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 20 V | 60 V | DFN2020MD-6 | MOSFET (Metal Oxide) | N-Channel | 56 mOhm | 1.65 W | 435 pF | Automotive | 2.7 V | -55 °C | 150 °C | 4.5 V 10 V | Surface Mount | 6-UDFN Exposed Pad | AEC-Q101 | 12 nC | 4 A |