Discrete Semiconductor Products

STW42N60M2-EP

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STMicroelectronics

N-CHANNEL 600 V, 0.076 OHM TYP., 34 A MDMESH M2 EP POWER MOSFET IN A TO-247 PACKAGE

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Discrete Semiconductor Products

STW42N60M2-EP

Active

STMicroelectronics

N-CHANNEL 600 V, 0.076 OHM TYP., 34 A MDMESH M2 EP POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW42N60M2-EP

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	55 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2370 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	87 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STW42N60M2-EP Series

N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature
STMicroelectronics STW42N60M2-EP	25 V	4.75 V	600 V	TO-247-3	55 nC	10 V	Through Hole	2370 pF	87 mOhm	MOSFET (Metal Oxide)	250 W	N-Channel	34 A	TO-247-3	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1020	$ 8.46
Newark	Each	1	$ 9.67
		10	$ 8.94
		25	$ 8.62
		50	$ 8.19
		100	$ 7.76
		250	$ 7.46
		500	$ 7.16

Description

General part information

STW42N60M2-EP Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.