Discrete Semiconductor Products

SQM100N04-2M7_GE3

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MOSFET N-CH 40V 100A TO263

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Discrete Semiconductor Products

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MOSFET N-CH 40V 100A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SQM100N04-2M7_GE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	145 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	7910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	157 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.7 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	FET Type	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SQM100N04-2M7_GE3	3.5 V	20 V	40 V	10 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	7910 pF	2.7 mOhm	TO-263 (D2PAK)	145 nC	AEC-Q101	N-Channel	Automotive	-55 °C	175 ░C	100 A	157 W
Vishay General Semiconductor - Diodes Division SQM100P10-19L_GE3	2.5 V	20 V	100 V	4.5 V 10 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	14100 pF	19 mOhm	TO-263 (D2PAK)		AEC-Q101	P-Channel	Automotive	-55 °C	175 ░C	93 A	375 W	350 nC

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General part information

N-Channel 40 V 100A (Tc) 157W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources