SQM100 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 100A TO263
| Part | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | FET Type | Grade | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3.5 V | 20 V | 40 V | 10 V | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 7910 pF | 2.7 mOhm | TO-263 (D2PAK) | 145 nC | AEC-Q101 | N-Channel | Automotive | -55 °C | 175 ░C | 100 A | 157 W | |
Vishay General Semiconductor - Diodes Division | 2.5 V | 20 V | 100 V | 4.5 V 10 V | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 14100 pF | 19 mOhm | TO-263 (D2PAK) | AEC-Q101 | P-Channel | Automotive | -55 °C | 175 ░C | 93 A | 375 W | 350 nC |