Discrete Semiconductor Products

UPA2550T1H-T2-AT

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2550T1H-T2-AT

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	930 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SMD, Flat Lead
Power - Max [Max]	2.2 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	8-VSOF
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Configuration	Operating Temperature	FET Feature	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id
Renesas Electronics Corporation UPA2550T1H-T2-AT	2 P-Channel (Dual)	150 °C	Logic Level Gate	2.2 W	930 pF	MOSFET (Metal Oxide)	5 A	8.7 nC	Surface Mount	8-VSOF	12 V	40 mOhm	8-SMD Flat Lead	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The UPA2550T1H is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources