Discrete Semiconductor Products

UPA2550T1H-T2-AT

Obsolete

12V 5A 2.2W 40MΩ@4.5V,2.5A 1V 2 P-CHANNEL VSOF-8 MOSFETS ROHS

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Discrete Semiconductor Products

Obsolete

12V 5A 2.2W 40MΩ@4.5V,2.5A 1V 2 P-CHANNEL VSOF-8 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2550T1H-T2-AT

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8.7 nC
Input Capacitance (Ciss) (Max) @ Vds	930 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SMD, Flat Lead
Power - Max [Max]	2.2 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	8-VSOF
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

N-Channel Mos Field Effect Transistor For Switching

Part	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Rds On (Max) @ Id, Vgs	FET Feature	Operating Temperature	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type
Renesas Electronics Corporation UPA2550T1H-T2-AT	930 pF	2 P-Channel	40 mOhm	Logic Level Gate	150 °C	MOSFET (Metal Oxide)	8-VSOF	12 V	5 A	2.2 W	1 V	8.7 nC	8-SMD Flat Lead	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	508	$ 0.59
LCSC	N/A	1	$ 0.00

General part information

The UPA2550T1H is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources