N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Rds On (Max) @ Id, Vgs | FET Feature | Operating Temperature | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 930 pF | 2 P-Channel | 40 mOhm | Logic Level Gate | 150 °C | MOSFET (Metal Oxide) | 8-VSOF | 12 V | 5 A | 2.2 W | 1 V | 8.7 nC | 8-SMD Flat Lead | Surface Mount |