UPA2550T1H Series

Catalog

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Part	Configuration	Operating Temperature	FET Feature	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id
Renesas Electronics Corporation UPA2550T1H-T2-AT	2 P-Channel (Dual)	150 °C	Logic Level Gate	2.2 W	930 pF	MOSFET (Metal Oxide)	5 A	8.7 nC	Surface Mount	8-VSOF	12 V	40 mOhm	8-SMD Flat Lead	1 V