Discrete Semiconductor Products

FGA180N30DTU

Obsolete

ON Semiconductor

IGBT 300V 180A 480W TO3P

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Discrete Semiconductor Products

FGA180N30DTU

Obsolete

ON Semiconductor

IGBT 300V 180A 480W TO3P

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FGA180N30DTU

Current - Collector (Ic) (Max) [Max]	180 A
Current - Collector Pulsed (Icm)	450 A
Gate Charge	185 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	480 W
Reverse Recovery Time (trr)	21 ns
Supplier Device Package	TO-3P
Vce(on) (Max) @ Vge, Ic [Max]	1.4 V
Voltage - Collector Emitter Breakdown (Max)	300 V

FGA180N33AT Series

330V, PDP Trench IGBT

Part	Mounting Type	Current - Collector Pulsed (Icm)	Package / Case	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type
ON Semiconductor FGA180N30DTU	Through Hole	450 A	SC-65-3 TO-3P-3	480 W	-55 °C	150 °C	1.4 V	21 ns	300 V	185 nC	180 A	TO-3P
ON Semiconductor FGA180N33ATTU	Through Hole	450 A	SC-65-3 TO-3P-3	390 W	-55 °C	150 °C	1.4 V			169 nC	180 A	TO-3P	330 V	Trench

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGA180N33AT Series

Using novel trench IGBT technology, ON Semiconductor's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Documents

Technical documentation and resources