FGA180N33AT Series

330V, PDP Trench IGBT

Catalog

330V, PDP Trench IGBT

Part	Mounting Type	Current - Collector Pulsed (Icm)	Package / Case	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type
ON Semiconductor FGA180N30DTU	Through Hole	450 A	SC-65-3 TO-3P-3	480 W	-55 °C	150 °C	1.4 V	21 ns	300 V	185 nC	180 A	TO-3P
ON Semiconductor FGA180N33ATTU	Through Hole	450 A	SC-65-3 TO-3P-3	390 W	-55 °C	150 °C	1.4 V			169 nC	180 A	TO-3P	330 V	Trench

Catalog

330V, PDP Trench IGBT

Key Features

• High current capability

• Low saturation voltage: VCE(sat)=1.68 V @ IC= 180 A

• High input impedance

• RoHS compliant

Description

Using novel trench IGBT technology, ON Semiconductor's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.