Discrete Semiconductor Products
SCT2450KEGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 10 A, 1.2 KV, 0.45 OHM, TO-247N
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Discrete Semiconductor Products
SCT2450KEGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 10 A, 1.2 KV, 0.45 OHM, TO-247N
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT2450KEGC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 463 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 85 W |
| Rds On (Max) @ Id, Vgs | 585 mOhm |
| Supplier Device Package | TO-247N |
| Vgs (Max) [Max] | 22 V, -6 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT2450 Series
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
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Technical documentation and resources
