50MT060ULS

Obsolete

IGBT MODULE 600V 100A 445W 10MTP

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Discrete Semiconductor Products

Obsolete

IGBT MODULE 600V 100A 445W 10MTP

Technical Specifications

Parameters and characteristics for this part

Specification	50MT060ULS

Configuration	Single
Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Cutoff (Max) [Max]	250 µA
Input	Standard
Input Capacitance (Cies) @ Vce	14.7 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	10-MTP
Power - Max [Max]	445 W
Supplier Device Package	10-MTP
Vce(on) (Max) @ Vge, Ic	2.55 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	IGBT Type	Power - Max [Max]	Input Capacitance (Cies) @ Vce
Vishay General Semiconductor - Diodes Division VS-50MT060WHTAPBF	Chassis Mount	MTP	114 A	Half Bridge	150 °C	-40 °C	3.2 V	12-MTP Module	400 µA	600 V	Standard
Vishay General Semiconductor - Diodes Division VS-50MT060TFT	Chassis Mount	20-MTP	55 A	Full Bridge	175 °C	-40 C	2.1 V	20-MTP Module	40 µA	600 V	Standard	Trench Field Stop	144 W	3000 pF
Vishay General Semiconductor - Diodes Division VS-50MT060PHTAPBF	Through Hole	12-MTP	121 A	Half Bridge	150 °C	-40 °C	1.64 V	12-MTP Module		600 V	Standard	Trench Field Stop	305 W	6000 pF
Vishay General Semiconductor - Diodes Division 50MT060ULS	Chassis Mount	10-MTP	100 A	Single	150 °C	-40 °C	2.55 V	10-MTP	250 µA	600 V	Standard		445 W	14.7 nF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Single 600 V 100 A 445 W Chassis Mount 10-MTP

Technical documentation and resources