50MT060 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 114A 658W MTP
| Part | Mounting Type | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Configuration | Operating Temperature [Max] | Operating Temperature [Min] | Vce(on) (Max) @ Vge, Ic | Package / Case | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | NTC Thermistor | Input | IGBT Type | Power - Max [Max] | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Chassis Mount | MTP | 114 A | Half Bridge | 150 °C | -40 °C | 3.2 V | 12-MTP Module | 400 µA | 600 V | Standard | ||||
Vishay General Semiconductor - Diodes Division | Chassis Mount | 20-MTP | 55 A | Full Bridge | 175 °C | -40 C | 2.1 V | 20-MTP Module | 40 µA | 600 V | Standard | Trench Field Stop | 144 W | 3000 pF | |
Vishay General Semiconductor - Diodes Division | Through Hole | 12-MTP | 121 A | Half Bridge | 150 °C | -40 °C | 1.64 V | 12-MTP Module | 600 V | Standard | Trench Field Stop | 305 W | 6000 pF | ||
Vishay General Semiconductor - Diodes Division | Chassis Mount | 10-MTP | 100 A | Single | 150 °C | -40 °C | 2.55 V | 10-MTP | 250 µA | 600 V | Standard | 445 W | 14.7 nF |