Discrete Semiconductor Products
FDB050AN06A0
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 80A, 5MΩ
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Discrete Semiconductor Products
FDB050AN06A0
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 80A, 5MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDB050AN06A0 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 80 A, 18 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 245 W |
| Rds On (Max) @ Id, Vgs | 5 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.26 | |
| 10 | $ 2.12 | |||
| 100 | $ 1.48 | |||
| Digi-Reel® | 1 | $ 3.26 | ||
| 10 | $ 2.12 | |||
| 100 | $ 1.48 | |||
| Tape & Reel (TR) | 800 | $ 1.14 | ||
| 1600 | $ 1.06 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.95 | |
| 10 | $ 2.80 | |||
| 25 | $ 2.59 | |||
| 50 | $ 2.37 | |||
| 100 | $ 2.15 | |||
| ON Semiconductor | N/A | 1 | $ 1.13 | |
Description
General part information
FDB050AN06A0 Series
N-Channel PowerTrench®MOSFET 60 V, 80 A, 5 mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.
Documents
Technical documentation and resources