Technical Specifications
Parameters and characteristics for this part
| Specification | MJ14001G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 |
| Mounting Type | Through Hole |
| Power - Max [Max] | 300 W |
| Supplier Device Package | TO-204 |
| Supplier Device Package | TO-3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJ14001 Series
The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications.. The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices.
Documents
Technical documentation and resources