MJ14001 Series

Power 60A 60V Discrete PNP

Catalog

Power 60A 60V Discrete PNP

Part	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor MJ14001G	3 V	TO-204	TO-3	60 V	Through Hole	60 A	300 W	1 mA	PNP	15

Catalog

Power 60A 60V Discrete PNP

Key Features

• High Current Capability - ICContinuous = 60 Amperes

• DC Current Gain - hFE= 15-100 @ IC= 50 Adc

• Low Collector-Emitter Saturation Voltage - VCE(sat)= 2.5 Vdc (Max) @ IC= 50 Adc

• Pb-Free Packages are Available

Description

The NPN Bipolar Power Transistor is designed for use in high power amplifier and switching circuit applications.. The MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) are complementary devices.