Discrete Semiconductor Products

SQS482ENW-T1_GE3

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N-CHANNEL 30-V (D-S) 175C MOSFET

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Discrete Semiconductor Products

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N-CHANNEL 30-V (D-S) 175C MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	SQS482ENW-T1_GE3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1865 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8W
Power Dissipation (Max) [Max]	62 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	8.5 mOhm
Supplier Device Package	PowerPAK® 1212-8W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Grade	Qualification
Vishay General Semiconductor - Diodes Division SQS482EN-T1_GE3	PowerPAK® 1212-8	2.5 V	PowerPAK® 1212-8	MOSFET (Metal Oxide)	4.5 V 10 V	62 W	39 nC	16 A	8.5 mOhm	Surface Mount	20 V	N-Channel	-55 °C	175 ░C	1865 pF	30 V
Vishay General Semiconductor - Diodes Division SQS482ENW-T1_GE3	PowerPAK® 1212-8W	2.5 V	PowerPAK® 1212-8W	MOSFET (Metal Oxide)	4.5 V 10 V	62 W	39 nC	16 A	8.5 mOhm	Surface Mount	20 V	N-Channel	-55 °C	175 ░C	1865 pF	30 V	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8W

Technical documentation and resources