SQS482 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 30V 16A PPAK1212-8
| Part | Package / Case | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Vgs (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | 2.5 V | PowerPAK® 1212-8 | MOSFET (Metal Oxide) | 4.5 V 10 V | 62 W | 39 nC | 16 A | 8.5 mOhm | Surface Mount | 20 V | N-Channel | -55 °C | 175 ░C | 1865 pF | 30 V | ||
 Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8W | 2.5 V | PowerPAK® 1212-8W | MOSFET (Metal Oxide) | 4.5 V 10 V | 62 W | 39 nC | 16 A | 8.5 mOhm | Surface Mount | 20 V | N-Channel | -55 °C | 175 ░C | 1865 pF | 30 V | Automotive | AEC-Q101 |