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NTMFSC011N08M7

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ON Semiconductor

N-CHANNEL DUAL COOLTM 56 POWERTRENCH® MOSFET 80V, 61A, 10MΩ

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8-DFN
Discrete Semiconductor Products

NTMFSC011N08M7

Active
ON Semiconductor

N-CHANNEL DUAL COOLTM 56 POWERTRENCH® MOSFET 80V, 61A, 10MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFSC011N08M7
Current - Continuous Drain (Id) @ 25°C12.5 A, 61 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]38 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)78.1 W, 3.3 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device Package8-DFN (5x6.15)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.09
10$ 1.33
100$ 0.90
500$ 0.72
1000$ 0.66
Digi-Reel® 1$ 2.09
10$ 1.33
100$ 0.90
500$ 0.72
1000$ 0.66
Tape & Reel (TR) 3000$ 0.59
6000$ 0.57
NewarkEach 2500$ 0.62
10000$ 0.60
ON SemiconductorN/A 1$ 0.61

Description

General part information

NTMFSC011N08M7 Series

This N-Channel MOSFET is produced using an advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Documents

Technical documentation and resources