Discrete Semiconductor Products
ST13009
ActiveSTMicroelectronics
BIPOLAR TRANSISTORS - BJT HV FAST-SWITCHING NPN POWER TRANS
Discrete Semiconductor Products
ST13009
ActiveSTMicroelectronics
BIPOLAR TRANSISTORS - BJT HV FAST-SWITCHING NPN POWER TRANS
Technical Specifications
Parameters and characteristics for this part
| Specification | ST13009 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 100 W |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ST13009 Series
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds.
Documents
Technical documentation and resources