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Technical Specifications
Parameters and characteristics for this part
| Specification | APT50GT60BRDQ2G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 110 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Gate Charge | 240 nC |
| IGBT Type | NPT |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 446 W |
| Reverse Recovery Time (trr) | 22 ns |
| Supplier Device Package | TO-247 [B] |
| Switching Energy | 1070 µJ, 995 µJ |
| Td (on/off) @ 25°C | 14 ns, 240 ns |
| Test Condition | 5 Ohm, 400 V, 15 V, 50 A |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 7.44 | |
| 100 | $ 6.43 | |||
| 250 | $ 6.19 | |||
| 500 | $ 6.04 | |||
| 1000 | $ 5.90 | |||
| 5000 | $ 5.70 | |||
Description
General part information
IGBT-NPT-600V Series
IGBT products from Microchip provide high-quality solutions for a
wide range of high-voltage and high-power applications. The switching frequency
range spans from DC for minimal conduction loss to 150 kHz for
Documents
Technical documentation and resources