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TO-247-3-PKG-Series
Discrete Semiconductor Products

APT50GT60BRDQ2G

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Microchip Technology

600V NON-PUNCH-THRU IGBT

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TO-247-3-PKG-Series
Discrete Semiconductor Products

APT50GT60BRDQ2G

Active
Microchip Technology

600V NON-PUNCH-THRU IGBT

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT50GT60BRDQ2G
Current - Collector (Ic) (Max) [Max]110 A
Current - Collector Pulsed (Icm)150 A
Gate Charge240 nC
IGBT TypeNPT
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]446 W
Reverse Recovery Time (trr)22 ns
Supplier Device PackageTO-247 [B]
Switching Energy1070 µJ, 995 µJ
Td (on/off) @ 25°C14 ns, 240 ns
Test Condition5 Ohm, 400 V, 15 V, 50 A
Vce(on) (Max) @ Vge, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectN/A 1$ 7.44
100$ 6.43
250$ 6.19
500$ 6.04
1000$ 5.90
5000$ 5.70

Description

General part information

IGBT-NPT-600V Series

IGBT products from Microchip provide high-quality solutions for a

wide range of high-voltage and high-power applications. The switching frequency

range spans from DC for minimal conduction loss to 150 kHz for