Discrete Semiconductor Products

NS8BT-E3/45

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DIODE GEN PURP 100V 8A TO220AC

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	NS8BT-E3/45

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Grade	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Supplier Device Package	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division NS8MTHE3/45	Automotive	8 A	10 çA	1000 V	Standard Recovery >500ns	200 mA	AEC-Q101	150 °C	-55 °C	TO-220-2	Through Hole	1.1 V	Standard	TO-220AC
Vishay General Semiconductor - Diodes Division NS8AT-E3/45		8 A	10 µA	50 V	Standard Recovery >500ns	200 mA		150 °C	-55 °C	TO-220-2	Through Hole	1.1 V	Standard	TO-220AC
Vishay General Semiconductor - Diodes Division NS8BTHE3_A/P	Automotive	8 A	10 µA	100 V	Standard Recovery >500ns	200 mA	AEC-Q101	150 °C	-55 °C	TO-220-2	Through Hole	1.1 V	Standard	TO-220AC	55 pF
Vishay General Semiconductor - Diodes Division NS8BT-E3/45		8 A	10 µA	100 V	Standard Recovery >500ns	200 mA		150 °C	-55 °C	TO-220-2	Through Hole	1.1 V	Standard	TO-220AC

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General part information

Diode 100 V 8A Through Hole TO-220AC

Technical documentation and resources