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MBR10H100-E3/45
Discrete Semiconductor Products

NS8BTHE3_A/P

Obsolete

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DocumentsDatasheet
MBR10H100-E3/45
Discrete Semiconductor Products

NS8BTHE3_A/P

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNS8BTHE3_A/P
Capacitance @ Vr, F55 pF
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr10 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-2
QualificationAEC-Q101
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NS8 Series

Diode 100 V 8A Through Hole TO-220AC

Documents

Technical documentation and resources