Discrete Semiconductor Products

TIP3055

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BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 70 V, 90 W, 15 A, 70 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 70 V, 90 W, 15 A, 70 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	TIP3055

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	700 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power - Max [Max]	90 W
Supplier Device Package	TO-247-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Low voltage NPN power transistor

Part	Package / Case	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Mounting Type	Operating Temperature
STMicroelectronics TIP3055	TO-247-3	NPN	700 µA	3 V	60 V	20	TO-247-3	15 A	90 W	Through Hole	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.

Technical documentation and resources