Specification	NDD02N60ZT4G

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	325 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	57 W
Rds On (Max) @ Id, Vgs	4.8 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

NDD02N60Z Series

Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)
ON Semiconductor NDD02N40T4G	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.7 A	39 W	121 pF	10 V	5.5 Ohm	Surface Mount	2 V	MOSFET (Metal Oxide)	5.5 nC	DPAK	N-Channel	20 V	400 V
ON Semiconductor NDD02N60ZT4G	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.2 A	57 W	325 pF	10 V	4.8 Ohm	Surface Mount	4.5 V	MOSFET (Metal Oxide)	16 nC	DPAK	N-Channel	30 V	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 600V 4.8 Ohm Single N-Channel

Technical documentation and resources