Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK
Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | -55 °C | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1.7 A | 39 W | 121 pF | 10 V | 5.5 Ohm | Surface Mount | 2 V | MOSFET (Metal Oxide) | 5.5 nC | DPAK | N-Channel | 20 V | 400 V |
 ON Semiconductor | -55 °C | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.2 A | 57 W | 325 pF | 10 V | 4.8 Ohm | Surface Mount | 4.5 V | MOSFET (Metal Oxide) | 16 nC | DPAK | N-Channel | 30 V | 600 V |