Discrete Semiconductor Products
RJ1P10BBHTL1
ActiveRohm Semiconductor
MOSFET, N-CH, 100V, 170A, TO-263AB ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RJ1P10BBHTL1
ActiveRohm Semiconductor
MOSFET, N-CH, 100V, 170A, TO-263AB ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RJ1P10BBHTL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 105 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 135 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 189 W |
| Rds On (Max) @ Id, Vgs | 3 mOhm |
| Supplier Device Package | TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RJ1P10BBH Series
RJ1P10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
Documents
Technical documentation and resources