Catalog
Nch 100V 170A, TO-263AB, Power MOSFET
Description
AI
RJ1P10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
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Nch 100V 170A, TO-263AB, Power MOSFET
Nch 100V 170A, TO-263AB, Power MOSFET
| Part | Operating Temperature | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 8600 pF | 189 W | 3 mOhm | Surface Mount | TO-263AB | 100 V | N-Channel | 105 A | 135 nC | MOSFET (Metal Oxide) | 20 V | 6 V 10 V |