Discrete Semiconductor Products

RJK6018DPM-00#T1

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MOSFET N-CH 600V 30A TO3PFM

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Discrete Semiconductor Products

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MOSFET N-CH 600V 30A TO3PFM

Technical Specifications

Parameters and characteristics for this part

Specification	RJK6018DPM-00#T1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	4100 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	235 mOhm
Supplier Device Package	TO-3PFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Renesas Electronics Corporation RJK6018DPK-00#T0	N-Channel	MOSFET (Metal Oxide)	30 A	30 V	TO-3P	Through Hole	235 mOhm	10 V	SC-65-3 TO-3P-3	600 V	200 W	150 °C	4100 pF	92 nC
Renesas Electronics Corporation RJK6018DPM-00#T1	N-Channel	MOSFET (Metal Oxide)	30 A	30 V	TO-3PFM	Through Hole	235 mOhm	10 V	TO-220-3 Full Pack	600 V	60 W	150 °C	4100 pF	92 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 30A (Ta) 60W (Tc) Through Hole TO-3PFM

Technical documentation and resources