RJK6018 Series
Manufacturer: Renesas Electronics Corporation
MOSFET N-CH 600V 30A TO3P
| Part | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | N-Channel | 200 W | 4100 pF | 30 V | 600 V | 150 °C | 10 V | SC-65-3 TO-3P-3 | 92 nC | MOSFET (Metal Oxide) | 30 A | Through Hole | 235 mOhm | TO-3P |
Renesas Electronics Corporation | N-Channel | 60 W | 4100 pF | 30 V | 600 V | 150 °C | 10 V | TO-220-3 Full Pack | 92 nC | MOSFET (Metal Oxide) | 30 A | Through Hole | 235 mOhm | TO-3PFM |