RJK6018 Series
Manufacturer: Renesas Electronics Corporation
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MOSFET N-CH 600V 30A TO3P
| Part | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | N-Channel | MOSFET (Metal Oxide) | 30 A | 30 V | TO-3P | Through Hole | 235 mOhm | 10 V | SC-65-3 TO-3P-3 | 600 V | 200 W | 150 °C | 4100 pF | 92 nC |
 Renesas Electronics Corporation | N-Channel | MOSFET (Metal Oxide) | 30 A | 30 V | TO-3PFM | Through Hole | 235 mOhm | 10 V | TO-220-3 Full Pack | 600 V | 60 W | 150 °C | 4100 pF | 92 nC |