Discrete Semiconductor Products

SI8405DB-T1-E3

Obsolete

MOSFET P-CH 12V 3.6A 4MICROFOOT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 3.6A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8405DB-T1-E3

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Power Dissipation (Max) [Max]	1.47 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI8405DB-T1-E3	950 mV	4-Microfoot	55 mOhm	8 V	MOSFET (Metal Oxide)	1.8 V 4.5 V	4-XFBGA CSPBGA	Surface Mount	3.6 A	12 V	1.47 W	P-Channel	21 nC	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI8405DB-T1-E1	950 mV	4-Microfoot	55 mOhm	8 V	MOSFET (Metal Oxide)	1.8 V 4.5 V	4-XFBGA CSPBGA	Surface Mount	3.6 A	12 V	1.47 W	P-Channel	21 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 3.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot

Technical documentation and resources

No documents available