SI8405 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 12V 3.6A 4MICROFOOT
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 950 mV | 4-Microfoot | 55 mOhm | 8 V | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 4-XFBGA CSPBGA | Surface Mount | 3.6 A | 12 V | 1.47 W | P-Channel | 21 nC | -55 °C | 150 °C |
Vishay General Semiconductor - Diodes Division | 950 mV | 4-Microfoot | 55 mOhm | 8 V | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 4-XFBGA CSPBGA | Surface Mount | 3.6 A | 12 V | 1.47 W | P-Channel | 21 nC | -55 °C | 150 °C |