STGF20M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 20 A LOW LOSS
STGF20M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 20 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGF20M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 63 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 32.6 W |
| Reverse Recovery Time (trr) | 166 ns |
| Supplier Device Package | TO-220FP |
| Switching Energy | 560 µJ, 140 µJ |
| Td (on/off) @ 25°C [Max] | 108 ns |
| Td (on/off) @ 25°C [Min] | 26 ns |
| Test Condition | 20 A, 12 Ohm, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGF20 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
